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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PML package High breakdown voltage High reliability. High speed APPLICATIONS Color TV horizontal deflection output. Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1884 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 5 20 60 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1884 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=4A;IB=0.8 A IC=4A;IB=0.8 A IC=100mA;IB=0 VEB=4V; IC=0 VCB=800V; IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=4A ; VCE=5V 8 800 1 10 1 |I MIN TYP. MAX 5.0 1.5 UNIT V V V mA A mA SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 tf TOR NDU ICO E SEM ANG INCH 5 10 Fall time IC=4A;RL=50| ; IB1=0.8A IB2=-1.6AVCC=200V 0.1 0.3 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1884 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1884 TOR NDU ICO E SEM ANG INCH 4 |
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